Effect of Implantation of Ba+ Ions on the Composition of MoO3 Nanofilms Produced by Thermal Oxidation
Keywords:
ion implantation, heating, band gap, barrier layerAbstract
The determined optimal conditions (oxygen pressure, substrate temperature) for obtaining nanofilms of molybdenum oxides on the Mo(111) surface by the thermal oxidation method. It has been found that the oxidation of Mo(111) with a thin film of Ba (ϴ ≈ 6 monolayers) oxidizes both Ba and Mo atoms. In the case of Mo(111) implanted with Ba+ ions at a saturation dose (D=6•10-16), Ba atoms are mainly oxidized in the ion-implanted layer. It was also found that in this case, a barrier layer is formed, which sharply hinders (or prevents) the diffusion of oxygen into the depth of the target.
The first found that at T=750-800 K oxide MoO4 is formed, at T=850-900 K MoO3, and at T=1000-1200K MoO2.