Surface Morphology of Nisi2/Si Films Produced By Solid-Phase Epitaxy

Authors

  • N. M. Mustafoeva Karshi Institute of Irrigation and Agrotechnology, 180003 Karshi, Uzbekistan
  • A. K. Tashatov Karshi State University, 180003 Karshi, Uzbekistan
  • N. M. Mustafaeva Karshi Institute of Engineering and Economics, 180003 Karshi, Uzbekistan
  • X. J. Mavlonova Karshi Institute of Engineering and Economics, 180003 Karshi, Uzbekistan

Keywords:

NiSi2 nanofilms, surface structure, Auger electron spectroscopy, solid phase deposition, morphology

Abstract

The methods of Oje electron spectroscopy, scanning electron and atomic force microscopy were used to study the formation of NiSi2 epitaxial layers during the deposition of Ni in Si with subsequent annealing. It has been shown that island thicknesses NiSi2 are formed at thicknesses h <150 Å.

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Published

2022-10-06

How to Cite

Mustafoeva, N. M. ., Tashatov, A. K. ., Mustafaeva, N. M. ., & Mavlonova, X. J. . (2022). Surface Morphology of Nisi2/Si Films Produced By Solid-Phase Epitaxy. Pioneer: Journal of Advanced Research and Scientific Progress, 1(4), 5–8. Retrieved from https://innosci.org/jarsp/article/view/240

Issue

Vol. 1 No. 4 (2022): October 2022

Section

Articles

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