Investigation of Physical Properties of Nisi2/Si Nanofilm

Authors

  • N. M. Mustafoeva Karshi Institute of Irrigation and Agrotechnology, 180003 Karshi, Uzbekistan
  • A. K. Tashatov Karshi State University, 180003 Karshi, Uzbekistan
  • N. M. Mustafaeva Karshi Institute of Engineering and Economics, 180003 Karshi, Uzbekistan
  • X. J. Mavlonova Karshi Institute of Engineering and Economics, 180003 Karshi, Uzbekistan

Keywords:

NiSi2 nanofilms, surface structure, Auger electron spectroscopy, solid phase deposition, morphology

Abstract

Single epitaxial NiSi2 nanofilms ~3.0–6.0 nm thick were obtained by low-energy implantation of Ni ions in combination with annealing. The band-energy parameters, the density of electronic states, and the emission and optical parameters of the NiSi2/Si(111) system have been studied. The composition, band gap, crystal structure, and electrical properties of the Si (111) surface layers of the NiSi2/Si film system were obtained by ion implantation.

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Published

2022-10-06

How to Cite

Mustafoeva, N. M. ., Tashatov, A. K. ., Mustafaeva, N. M. ., & Mavlonova, X. J. . (2022). Investigation of Physical Properties of Nisi2/Si Nanofilm. Pioneer: Journal of Advanced Research and Scientific Progress, 1(4), 9–11. Retrieved from https://innosci.org/jarsp/article/view/241

Issue

Vol. 1 No. 4 (2022): October 2022

Section

Articles